HiRel MOSFETs

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Infineon

英飞凌

Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：122.69 Kbytes 页数：8 Pages

IRF

Standard Power MOSFET - N-Channel Enhancement Mode

Features • International standard package JEDEC TO-247 AD • Low RDS (on)HDMOS™ process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times

文件：36.08 Kbytes 页数：2 Pages

IXYS

艾赛斯

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：541.53 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技