N-CHANNEL POWER MOSFET

文件：23.65 Kbytes 页数：2 Pages

SEME-LAB

N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

文件：255.93 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-Channel Power Mosfets

文件：518.69 Kbytes 页数：7 Pages

SAMSUNG

三星

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 32A, 200V, RDS(on)= 0.085Ω@VGS= 10 V • Low gate charge ( typical 95 nC) • Low Crss ( typical 75 pF) • Fast switching • 100 ava

文件：669.63 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体