Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：109.27 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤12mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.03 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ● Advanced Process Technology ● Dynamic dv/dt

文件：729.95 Kbytes 页数：8 Pages

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：1.49884 Mbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：1.49981 Mbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：1.49981 Mbytes 页数：9 Pages

IRF

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-247AC 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌