IRFP054N中文资料PDF规格书
IRFP054N规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
产品属性
- 型号:
IRFP054N
- 功能描述:
MOSFET N-CH 55V 81A TO-247AC
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
65480 |
询价 | ||||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
询价 | |||
IR/美国国际整流 |
23+ |
TO-247 |
5000 |
公司只做原装,可配单 |
询价 | ||
IRFP054N |
23+ |
TO-247 |
90000 |
询价 | |||
二极管 |
2021++ |
NA |
10000 |
原装正品价格优势!欢迎询价QQ:385913858TEL:15 |
询价 | ||
IOR |
828 |
TO-247 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+ |
TO-247AC |
8600 |
全新原装现货 |
询价 | ||
IOR |
2022+ |
TO-247 |
4000 |
原装原厂代理 可免费送样品 |
询价 | ||
IR |
23+ |
TO-247AC |
19526 |
询价 | |||
IOR |
828 |
TO-247 |
302 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 |