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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFP044	文件：1.996 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t 文件：1.996 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFP044	文件：170.96 Kbytes Page：6 Pages	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels 文件：170.96 Kbytes 页数：6 Pages	IRF	IRF
IRFP044	文件：300 bytes Page：1 Pages	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)	Infineon 英飞凌	Infineon
IRFP044N	文件：335.02 Kbytes Page：2 Pages	N-Channel MOSFET Transistor • DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤20mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：335.02 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFP044N	文件：105.25 Kbytes Page：8 Pages	Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：105.25 Kbytes 页数：8 Pages	IRF	IRF
IRFP044NPBF	文件：1.54744 Mbytes Page：9 Pages	Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：1.54744 Mbytes 页数：9 Pages	IRF	IRF
IRFP044PBF	文件：1.996 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t 文件：1.996 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFP044PBF.	文件：170.96 Kbytes Page：6 Pages	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels 文件：170.96 Kbytes 页数：6 Pages	IRF	IRF
IRFP044NPBF	文件：1.54744 Mbytes Page：9 Pages	ADVANCED PROCESS TECHNOLOGY 文件：1.54744 Mbytes 页数：9 Pages	IRF	IRF
IRFP044NPBF_15	文件：1.54744 Mbytes Page：9 Pages	ADVANCED PROCESS TECHNOLOGY 文件：1.54744 Mbytes 页数：9 Pages	IRF	IRF

技术参数

Package ：
TO-247
VDS max：
55.0V
RDS (on) max：
20.0mΩ
RDS (on)(@10V) max：
20.0mΩ
Polarity ：
N
ID max：
35.0A
ID (@ TC=100°C) max：
35.0A
ID (@ TC=25°C) max：
49.0A
Ptot max：
100.0W
QG ：
40.7nC
Mounting ：
THT
Tj max：
175.0°C
Qgd ：
16.0nC
VGS max：
20.0V
RthJC max：
1.5K/W

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	IRFP044	IR	2021+	TO-247	9000	原装现货,随时欢迎询价	询价
深圳市明嘉莱科技有限公司	IRFP044	IR	24+	TO 3P	161468	明嘉莱只做原装正品现货	询价
深圳市勤思达科技有限公司	IRFP044	IR	24+	N/A	8000	全新原装正品,现货销售	询价
柒号芯城电子商务(深圳)有限公司	IRFP044	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市坤融电子科技有限公司	IRFP044	IR	2025+	TO-247	3500	原装进口价格优请找坤融电子!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IRFP044	IR	25+	TO-3P	18000	原厂直接发货进口原装	询价
深圳市一线半导体有限公司	IRFP044		24+		1100		询价
深圳市星佑电子有限公司	IRFP044	IR	06+	TO-247	800	全新原装绝对有货	询价
深圳市弘为电子有限公司	IRFP044	IR	24+	原厂封装	1000	原装现货假一罚十	询价
深圳市凌旭科技有限公司	IRFP044	IR	2016+	TO-247	6000	公司只做原装,假一罚十,可开17%增值税发票!	询价

更多IRFP044供应商更新时间2025-12-11 14:00:00

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