Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designe

文件：107.54 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET

Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Advanced Process Technology Ultra Low

文件：367.52 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

类型：N沟道 漏源电压(Vdss)：55V 连续漏极电流(Id)：110A 功率(Pd)：200W 导通电阻(RDS(on)@Vgs,Id)：8mΩ@10V,59A N沟道,55V,110A,8mΩ@10V

文件：612.848 Kbytes 页数：9 Pages

INFINEON

英飞凌

PDF上传者：深圳市亚泰盈科电子有限公司

isc N-Channel MOSFET Transistor

文件：355.64 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

文件：727.96 Kbytes 页数：8 Pages

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：2.55214 Mbytes 页数：9 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：604.12 Kbytes 页数：9 Pages

IRF

N-Channel MOSFET Transistor

文件：204.54 Kbytes 页数：2 Pages

ISC

无锡固电

ULTRA LOW ON RESISTANCE

文件：604.12 Kbytes 页数：9 Pages

IRF

采用 TO-247 封装的 55V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌