POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=8.0A)

RDS(on) 0.85 Ω ID 8.0A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establi

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IRF

Simple Drive Requirements

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IRF

HiRel MOSFETs

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Infineon

英飞凌

Simple Drive Requirements

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IRF