POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A)

RDS(on) 0.315 Ω ID 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establi

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IRF

Simple Drive Requirements

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IRF

高可靠性功率 MOSFET

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Infineon

英飞凌

Simple Drive Requirements

文件：276.84 Kbytes 页数：7 Pages

IRF