POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A)

RDS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established

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IRF

Simple Drive Requirements

文件：137.5 Kbytes 页数：7 Pages

IRF

Simple Drive Requirements

Infineon

英飞凌

Simple Drive Requirements

文件：137.5 Kbytes 页数：7 Pages

IRF

N-CHANNEL POWER MOSFET

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SEME-LAB

MOSFETs and JFETs

TT Electronics