POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)

POWER MOSFET SURFACE MOUNT(SMD-1) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

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IRF

Simple Drive Requirements

文件：170.46 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

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Infineon

英飞凌

Simple Drive Requirements

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IRF

N-CHANNEL POWER MOSFET

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SEME-LAB

MOSFETs and JFETs

TT Electronics