Single channel high reliability power MOSFETs

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Infineon

英飞凌

N-CHANNEL POWER MOSFET

VDSS 60V ID(cont) 45A RDS(on) 0.027Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES

文件：23.58 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB

Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

文件：170.62 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.53169 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世