Single channel high reliability power MOSFETs

\n优势:;

Infineon

英飞凌

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRFP460 is supplied i

文件：94.03 Kbytes 页数：7 Pages

PHI

PHI

N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.22 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALA

文件：91.86 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

20A, 500V, 0.270 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：55.75 Kbytes 页数：7 Pages

INTERSIL