N–CHANNEL POWER MOSFET

VDSS 200V ID(cont) 27.4A RDS(on) 0.100Ω FEATURES • N–CHANNEL MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • HERMETIC ISOLATED TO-254 PACKAGE • CERAMIC SURFACE MOUNT PACKAGE OPTION

文件：46.83 Kbytes 页数：2 Pages

SEME-LAB

MOSFETs and JFETs

TT Electronics

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A)

RDS(on) 0.100 Ω ID 27.4A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-estab

文件：217.76 Kbytes 页数：6 Pages

IRF

N?밅HANNEL POWER MOSFET

FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES

文件：25.99 Kbytes 页数：2 Pages

SEME-LAB

Simple Drive Requirements

文件：158.22 Kbytes 页数：7 Pages

IRF