400V, N-CHANNEL HEXFET MOSFETTECHNOLOGY

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

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IRF

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=23 A@ TC=25℃ · Drain Source Voltage -VDSS= 400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.36 Kbytes 页数：2 Pages

ISC

无锡固电

Simple Drive Requirements

文件：253.7 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

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Infineon

英飞凌

MOSFETs and JFETs

TT Electronics

Simple Drive Requirements

文件：253.7 Kbytes 页数：7 Pages

IRF

高可靠性功率 MOSFET

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Infineon

英飞凌