HEXFET Power MOSFET

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed powe

文件：223.44 Kbytes 页数：9 Pages

IRF

Power MOSFET

文件：200.13 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS(Min.)= 600V, ID= 5A

文件：488.18 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS(Min.)= 600V, ID= 6A

文件：1.22673 Mbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

600V N-Channel MOSFET

文件：2.23424 Mbytes 页数：7 Pages

KERSEMI