IRFIBC20GPBF资料使用说明书供应商报价IRF-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRFIBC20GPBF	文件：1.47864 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati 文件：1.47864 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFIBC20GPBF	文件：920.46 Kbytes Page：8 Pages	HEXFET Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 文件：920.46 Kbytes 页数：8 Pages	IRF	IRF
IRFIBC20GPBF	文件：3.99545 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：3.99545 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFIBC20GPBF	文件：300 bytes Page：1 Pages	HEXFET Power MOSFET	Infineon 英飞凌	Infineon

更多IRFIBC20GPBF供应商更新时间2025-10-4 13:40:00