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IRFIBC20GPBF中文资料KERSEMI数据手册PDF规格书
IRFIBC20GPBF规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
产品属性
- 型号:
IRFIBC20GPBF
- 功能描述:
MOSFET N-Chan 600V 1.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
732 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
24+ |
TO-220F |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
07+ |
TO-220F |
530 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
06+ |
TO-220F |
1200 |
询价 | |||
VISHAY/威世 |
23+ |
TO-220 |
90000 |
一定原装深圳现货 |
询价 | ||
IR |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
询价 | ||
IR |
23+ |
TO-220 |
18689 |
询价 | |||
IR |
24+ |
TO-220 |
2036 |
只做原厂渠道 可追溯货源 |
询价 |