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IRFI730G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl

文件:1.57493 Mbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFI730G

Power MOSFET

文件:914.21 Kbytes 页数:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFI730GPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl

文件:1.57493 Mbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFI730GPBF

HEXFET Power MOSFET

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文件:923.29 Kbytes 页数:7 Pages

IRF

IRFI730G_V01

Power MOSFET

文件:914.21 Kbytes 页数:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFI730GPBF

Power MOSFET

文件:914.21 Kbytes 页数:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFI730G

400V HEXFET power MOSFET

Infineon

英飞凌

IRFI730GPBF

MOSFET N-CH400V HEXFET MOSFET

Vishay

威世

详细参数

  • 型号:

    IRFI730G

  • 功能描述:

    MOSFET N-Chan 400V 3.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
1215+
TO-220F
150000
全新原装,绝对正品,公司大量现货供应.
询价
IR
06+
TO-220
4000
自己公司全新库存绝对有货
询价
IR
25+
TO-220
1400
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
24+
TO-220FullPak(Iso)
8866
询价
IR
24+
TO-220F
5000
只做原装公司现货
询价
IR
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
询价
IR
19+
TO-220
32000
原装正品,现货特价
询价
Vishay
2022+
50
全新原装 货期两周
询价
IR
24+
TO-220F
6430
原装现货/欢迎来电咨询
询价
IR/VISH
24+
65230
询价
更多IRFI730G供应商 更新时间2026-1-25 11:04:00