SMPS MOSFET

VDSS 500V Rds(on) max 0.52Ω ID 6.6A Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch

文件：194.14 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：198.36 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

MOSFET N-CH500V HEXFET MOSFET

Vishay

威世

Power MOSFET

FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Reqirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-fr

文件：193.78 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Features and Benefits ● Super Fast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate charge results in simpler drive requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate Voltage Threshold Offers Improved Noise Immunity Applicatio

文件：216.64 Kbytes 页数：9 Pages

IRF

Power MOSFET

FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Reqirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-fr

文件：193.78 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司