首页 >IRFIB5N65APBF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFIB5N65APBF | SMPS MOSFET 文件:218.65 Kbytes 页数:8 Pages | IRF | IRF | |
IRFIB5N65APBF | MOSFET N-CH650V HEXFET MOSFET | Vishay 威世 | Vishay | |
IRFIB5N65APBF | SMPS MOSFET | Infineon 英飞凌 | Infineon | |
Electronic ballast 文件:612.9 Kbytes 页数:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | ||
Electronic ballast 文件:612.9 Kbytes 页数:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES 文件:487.9 Kbytes 页数:6 Pages | KEC KEC(Korea Electronics) | KEC |
详细参数
- 型号:
IRFIB5N65APBF
- 功能描述:
MOSFET N-Chan 650V 5.1 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VishayIR |
24+ |
TO-220F |
2525 |
询价 | |||
IR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
24+ |
TO-220 |
5000 |
只做原装公司现货 |
询价 | ||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
vishay |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
VI1 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
25+ |
TO220-3 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VB |
21+ |
TO-220CFM |
10000 |
原装现货假一罚十 |
询价 | ||
Vishay Siliconix |
22+ |
TO2203 Isolated Tab |
9000 |
原厂渠道,现货配单 |
询价 |
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