丝印：JCS5N65FB；Package：TO-220MF；Electronic ballast

文件：612.9 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Electronic ballast

文件：612.9 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

场效应晶体管/MOSFET-600V-700V系列

JSMC

华微电子

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

文件：487.9 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

文件：403.04 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

Green device available.

文件：716.37 Kbytes 页数：4 Pages

KERSEMI