Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 2.000Ω (Typ.)

文件：229.29 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：649.33 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl

文件：1.79738 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Hexfet Power mosfet

文件：279.16 Kbytes 页数：6 Pages

IRF