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IRFIZ24E

Power MOSFET(Vdss=60V, Rds(on)=0.071ohm, Id=14A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

文件:114.75 Kbytes 页数:8 Pages

IRF

IRFIZ24EPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:221.7 Kbytes 页数:8 Pages

IRF

IRFIZ24G

HEXFET POWER MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri

文件:179.41 Kbytes 页数:6 Pages

IRF

IRFIZ24G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:1.57762 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFIZ24G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:4.82053 Mbytes 页数:7 Pages

KERSEMI

IRFIZ24GPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:4.82053 Mbytes 页数:7 Pages

KERSEMI

IRFIZ24GPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:1.57762 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFIZ24GPBF

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri

文件:927.46 Kbytes 页数:8 Pages

IRF

IRFIZ24N

Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=14A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

文件:105.4 Kbytes 页数:8 Pages

IRF

IRFIZ24NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:218.35 Kbytes 页数:9 Pages

IRF

详细参数

  • 型号:

    IRFIZ24

  • 功能描述:

    MOSFET N-Chan 60V 14 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
17+
TO-220F
31518
原装正品 可含税交易
询价
IR
06+
TO-220
4000
全新原装 绝对有货
询价
IR
24+
TO-220F
85000
询价
IOR
16+
TO-220
10000
全新原装现货
询价
VIS
23+
NA
13256
专做原装正品,假一罚百!
询价
IR
20+
TO-220F
38900
原装优势主营型号-可开原型号增税票
询价
IR
24+
TO-220F
6430
原装现货/欢迎来电咨询
询价
IR
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
VISHAY
25+
TO220-3
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
更多IRFIZ24供应商 更新时间2025-11-21 14:00:00