HEXFET Power MOSFET

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FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ 175oC Operating Temperature ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Low RDS(ON) : 0.106 Ω (Typ.)

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