| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFIBE20G | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：1.55045 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFIBE20G | Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri 文件：168.71 Kbytes 页数：6 Pages | IRF | IRF | |
IRFIBE20G | iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =6.5Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：319.4 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
IRFIBE20G | Power MOSFET 文件：915.46 Kbytes 页数：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：1.55045 Mbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri 文件：988.87 Kbytes 页数：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri 文件：168.71 Kbytes 页数：6 Pages | IRF | IRF | ||
Power MOSFET 文件：915.46 Kbytes 页数：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：915.46 Kbytes 页数：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
IRFIBE20G | Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A) | Infineon 英飞凌 | Infineon |
详细参数
- 型号：
IRFIBE20G
- 功能描述：
MOSFET N-Chan 800V 1.4 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
TO-220FULLPAK(ISO) |
31518 |
原装正品 可含税交易 |
询价 | ||
IR |
24+ |
TO 220F |
161014 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2015+ |
TO-220F |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
06+ |
TO-220 |
4000 |
自己公司全新库存绝对有货 |
询价 | ||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
询价 | |||
INTERSIL |
23+ |
65480 |
询价 | ||||
VISHAY |
25+ |
TO220-3 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
19+ |
TO-220 |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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