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IRFIBE20G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:1.55045 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFIBE20G

Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri

文件:168.71 Kbytes 页数:6 Pages

IRF

IRFIBE20G

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =6.5Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件:319.4 Kbytes 页数:2 Pages

ISC

无锡固电

IRFIBE20G

Power MOSFET

文件:915.46 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFIBE20GPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:1.55045 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFIBE20GPBF

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri

文件:988.87 Kbytes 页数:8 Pages

IRF

IRFIBE20GPBF.

Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri

文件:168.71 Kbytes 页数:6 Pages

IRF

IRFIBE20G_V01

Power MOSFET

文件:915.46 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFIBE20GPBF

Power MOSFET

文件:915.46 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFIBE20G

Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A)

Infineon

英飞凌

详细参数

  • 型号:

    IRFIBE20G

  • 功能描述:

    MOSFET N-Chan 800V 1.4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
17+
TO-220FULLPAK(ISO)
31518
原装正品 可含税交易
询价
IR
24+
TO 220F
161014
明嘉莱只做原装正品现货
询价
IR
2015+
TO-220F
12500
全新原装,现货库存长期供应
询价
IR
06+
TO-220
4000
自己公司全新库存绝对有货
询价
IR
24+
TO-220FullPak(Iso)
8866
询价
INTERSIL
23+
65480
询价
VISHAY
25+
TO220-3
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
IR
19+
TO-220
10000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多IRFIBE20G供应商 更新时间2025-12-7 14:00:00