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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFIBC20G	文件：1.47864 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati 文件：1.47864 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFIBC20G	文件：167.28 Kbytes Page：6 Pages	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 文件：167.28 Kbytes 页数：6 Pages	IRF	IRF
IRFIBC20G	文件：3.99545 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：3.99545 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFIBC20G	文件：319.25 Kbytes Page：2 Pages	iscN-Channel MOSFET Transistor 文件：319.25 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFIBC20GPBF	文件：3.99545 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：3.99545 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFIBC20GPBF	文件：920.46 Kbytes Page：8 Pages	HEXFET Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 文件：920.46 Kbytes 页数：8 Pages	IRF	IRF
IRFIBC20GPBF	文件：1.47864 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati 文件：1.47864 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFIBC20G	文件：300 bytes Page：1 Pages	Power MOSFET	Vishay 威世	Vishay
IRFIBC20GPBF	文件：300 bytes Page：1 Pages	HEXFET Power MOSFET	Infineon 英飞凌	Infineon

详细参数

型号：
IRFIBC20G
功能描述：
MOSFET N-Chan 600V 1.7 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	IRFIBC20G	IR	24+	TO 220	161262	明嘉莱只做原装正品现货	询价
深圳市勤思达科技有限公司	IRFIBC20G	IR	2015+	TO-220F	12500	全新原装,现货库存长期供应	询价
芯有半导体（深圳）有限公司	IRFIBC20G	IR	06+	TO-220	4500	全新原装绝对有货	询价
深圳市卓越微芯电子有限公司	IRFIBC20G	IR	25+	TO220F	58	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市一线半导体有限公司	IRFIBC20G	IR	24+	TO-220FullPak(Iso)	8866		询价
深圳市振宏微科技有限公司	IRFIBC20G	IR	23+	TO-220F	10000	专做原装正品,假一罚百!	询价
瀚佳科技(深圳)有限公司	IRFIBC20G	IR/VISH	24+		65230		询价
艾睿（深圳）半导体有限公司	IRFIBC20G	IR	2447	TO220F	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	IRFIBC20G	VISHAY	25+	TO220-3	3000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市凌旭科技有限公司	IRFIBC20G	IR	21+	TO220F	1709		询价

更多IRFIBC20G供应商更新时间2026-1-30 19:10:00

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