Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl

文件：1.42133 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.co

文件：585.26 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：181.34 Kbytes 页数：6 Pages

IRF

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.co

文件：585.26 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl

文件：1.42133 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=55V, Rds(on)=0.024ohm, Id=31A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

文件：106.55 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：262.13 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides

文件：508.64 Kbytes 页数：9 Pages

Infineon

英飞凌

Advanced Power MOSFET

文件：231.63 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：274.69 Kbytes 页数：2 Pages

ISC

无锡固电