Power MOSFET(Vdss=55V, Rds(on)=0.024ohm, Id=31A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

文件：106.55 Kbytes 页数：8 Pages

IRF

Isc N-Channel MOSFET Transistor

文件：260.019 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides

文件：508.64 Kbytes 页数：9 Pages

Infineon

英飞凌

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：262.13 Kbytes 页数：8 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：271.08 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：271.08 Kbytes 页数：9 Pages

IRF

采用 TO-220 FullPak 封装的 55V 单 N 通道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌