Advanced high cell denity trench technology for ultra RDS(ON)

文件：661.53 Kbytes 页数：4 Pages

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Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ 175oC Operating Temperature ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Low RDS(ON) : 0.106 Ω (Typ.)

文件：288.18 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：275.47 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Opereting Temperature ● Extended Safe Operating Area ● Lower Leakage Current : -10 µA (Max.) @ VDS = -60V ● Low RDS(ON) : 0.106 Ω (Typ.)

文件：236.39 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体