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IRFIZ34E

Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

文件:114.58 Kbytes 页数:8 Pages

IRF

IRFIZ34EPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:262.04 Kbytes 页数:8 Pages

IRF

IRFIZ34G

HEXFET POWER MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:285.12 Kbytes 页数:6 Pages

IRF

IRFIZ34G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applica

文件:3.01432 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世

IRFIZ34G

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.co

文件:1.56298 Mbytes 页数:10 Pages

VishayVishay Siliconix

威世

IRFIZ34G_V01

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.co

文件:1.56298 Mbytes 页数:10 Pages

VishayVishay Siliconix

威世

IRFIZ34GPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applica

文件:3.01432 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世

IRFIZ34GPBF

HEXFET짰 Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:1.32181 Mbytes 页数:8 Pages

IRF

IRFIZ34N

Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

文件:105.19 Kbytes 页数:8 Pages

IRF

IRFIZ34NPBF

HEXFET짰 Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:270.34 Kbytes 页数:9 Pages

IRF

技术参数

  • 漏源电压(Vdss):

    60V

  • 栅源极阈值电压(最大值):

    4V @ 250uA

  • 漏源导通电阻(最大值):

    50 mΩ @ 12A,10V

  • 类型:

    N 沟道

  • 功率耗散(最大值):

    42W(Tc)

供应商型号品牌批号封装库存备注价格
IR
23+
TO-220
20000
原装正品,假一罚十
询价
Vishay
24+
NA
3742
进口原装正品优势供应
询价
vishay
23+
NA
1136
专做原装正品,假一罚百!
询价
IR
18+
TO-220
8264
全新原装现货,可出样品,可开增值税发票
询价
VISHAY
20+
na
65790
原装优势主营型号-可开原型号增税票
询价
VISHAY(威世)
2447
TO-220(TO-220-3)
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
询价
VISHAY
25+
TO220-3
1675
就找我吧!--邀您体验愉快问购元件!
询价
IR
24+
TO-220
9600
原装现货,优势供应,支持实单!
询价
IR
23+
TO220F
50000
全新原装正品现货,支持订货
询价
VB
21+
TO-220FP
10000
原装现货假一罚十
询价
更多IRFIZ34供应商 更新时间2025-10-11 15:36:00