型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A) Through-Hole Packags TO-220 FullPak (Fully Isolated) 文件:114.58 Kbytes 页数:8 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:262.04 Kbytes 页数:8 Pages | IRF | IRF | ||
HEXFET POWER MOSFET Coming Soon. If you have some information on related parts, please share useful information by adding links below. 文件:285.12 Kbytes 页数:6 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applica 文件:3.01432 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.co 文件:1.56298 Mbytes 页数:10 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.co 文件:1.56298 Mbytes 页数:10 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applica 文件:3.01432 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世 | Vishay | ||
HEXFET짰 Power MOSFET Coming Soon. If you have some information on related parts, please share useful information by adding links below. 文件:1.32181 Mbytes 页数:8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A) Through-Hole Packags TO-220 FullPak (Fully Isolated) 文件:105.19 Kbytes 页数:8 Pages | IRF | IRF | ||
HEXFET짰 Power MOSFET Coming Soon. If you have some information on related parts, please share useful information by adding links below. 文件:270.34 Kbytes 页数:9 Pages | IRF | IRF |
技术参数
- 漏源电压(Vdss):
60V
- 栅源极阈值电压(最大值):
4V @ 250uA
- 漏源导通电阻(最大值):
50 mΩ @ 12A,10V
- 类型:
N 沟道
- 功率耗散(最大值):
42W(Tc)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
20000 |
原装正品,假一罚十 |
询价 | ||
Vishay |
24+ |
NA |
3742 |
进口原装正品优势供应 |
询价 | ||
vishay |
23+ |
NA |
1136 |
专做原装正品,假一罚百! |
询价 | ||
IR |
18+ |
TO-220 |
8264 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
VISHAY(威世) |
2447 |
TO-220(TO-220-3) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
VISHAY |
25+ |
TO220-3 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
24+ |
TO-220 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
IR |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VB |
21+ |
TO-220FP |
10000 |
原装现货假一罚十 |
询价 |
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