| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFIZ34V | Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A) Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：105.39 Kbytes 页数：8 Pages | IRF | IRF | |
Advanced Process Technology Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：214.29 Kbytes 页数：8 Pages | IRF | IRF | ||
IRFIZ34V | Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A) | Infineon 英飞凌 | Infineon | |
SOT-223 | IR | |||
SOT-223 | IR |
详细参数
- 型号：
IRFIZ34V
- 制造商：
International Rectifier
- 功能描述：
MOSFET Transistor, N-Channel, TO-220AB(FP)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2015+ |
TO-220F |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
05+ |
原厂原装 |
2101 |
只做全新原装真实现货供应 |
询价 | ||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
询价 | |||
IR |
23+ |
TO-220F |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
21+ |
TO-220F |
10000 |
原装现货假一罚十 |
询价 | ||
IR |
2022+ |
TO-220F |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
IR |
23+ |
TO-220FullPak( |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
TO-220F |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IR |
24+ |
NA/ |
1310 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
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