IRFIZ48V说明书PDF资料供应代理英飞凌IRF-114ic电子网

首页 >IRFIZ48V>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IRFIZ48V	文件：93.31 Kbytes Page：8 Pages	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：93.31 Kbytes 页数：8 Pages	IRF	IRF
IRFIZ48V	文件：103.73 Kbytes Page：8 Pages	HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：103.73 Kbytes 页数：8 Pages	IRF	IRF
IRFIZ48VPBF	文件：103.73 Kbytes Page：8 Pages	HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：103.73 Kbytes 页数：8 Pages	IRF	IRF
IRFIZ48V	文件：300 bytes Page：1 Pages	HEXFET Power MOSFET	Infineon 英飞凌	Infineon

更多IRFIZ48V供应商更新时间2026-1-25 10:01:00