Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

文件：144.1 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

文件：158.96 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

文件：164.33 Kbytes 页数：8 Pages

IRF

丝印：FL014N；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92767 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Advanced Process Technology

文件：164.33 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

文件：164.33 Kbytes 页数：8 Pages

IRF

55V 单个 N 通道 HEXFET Power MOSFET, 采用 SOT-223 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌