Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

文件：949.69 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Fast Switching • E

文件：176.76 Kbytes 页数：6 Pages

IRF

Power MOSFET

文件：1.0036 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世

Power MOSFET

文件：1.0036 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dV/dt rating;

Vishay

威世

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)

Infineon

英飞凌

Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

文件：144.1 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

文件：158.96 Kbytes 页数：8 Pages

IRF

丝印：FL014N；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92767 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Advanced Process Technology

Description Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for

文件：164.33 Kbytes 页数：8 Pages

IRF