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IRFIZ48

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件:93.31 Kbytes 页数:8 Pages

IRF

IRFIZ48

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A)

Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)

文件:169.54 Kbytes 页数:6 Pages

IRF

IRFIZ48

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

文件:109.29 Kbytes 页数:8 Pages

IRF

IRFIZ48G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl

文件:1.47306 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRFIZ48G

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A)

Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)

文件:169.54 Kbytes 页数:6 Pages

IRF

IRFIZ48GPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl

文件:1.47306 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRFIZ48N

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

文件:109.29 Kbytes 页数:8 Pages

IRF

IRFIZ48V

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件:93.31 Kbytes 页数:8 Pages

IRF

IRFIZ48V

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件:103.73 Kbytes 页数:8 Pages

IRF

IRFIZ48VPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件:103.73 Kbytes 页数:8 Pages

IRF

技术参数

  • Package :

    TO-220-3 FP

  • VDS max:

    55.0V

  • RDS (on)(@10V) max:

    16.0mΩ

  • RDS (on) max:

    16.0mΩ

  • Polarity :

    N

  • ID (@ TC=100°C) max:

    25.0A

  • ID  max:

    25.0A

  • ID (@ TC=25°C) max:

    36.0A

  • Ptot max:

    42.0W

  • QG :

    59.3nC 

  • Mounting :

    THT

  • RthJC max:

    3.6K/W

  • VGS max:

    20.0V

  • Qgd :

    26.0nC 

  • Tj max:

    175.0°C

供应商型号品牌批号封装库存备注价格
IR
15+
TO-220F
11560
全新原装,现货库存,长期供应
询价
IR
23+
TO
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-220
8000
只做原装现货
询价
IR
23+
TO-220
7000
询价
INTERNATIONA
05+
原厂原装
5166
只做全新原装真实现货供应
询价
IR
24+
TO220
450
原装现货假一罚十
询价
IR
TO-220F
1000
原装长期供货!
询价
IR
23+
TO-220
5000
原装正品,假一罚十
询价
VISHAY/SILICONIX
16+
NA
8800
原装现货,货真价优
询价
更多IRFIZ48供应商 更新时间2025-10-4 11:03:00