Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.)

文件：227.93 Kbytes 页数：7 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：695.11 Kbytes 页数：9 Pages

Fairchild

仙童半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

文件：2.81499 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)

IRF1840G -> Correct Partumber IRFI840G 1. Isolated Package 2. High Voltage Isolation = 2.5VKRMS 3. Sink to Lead Creepage Dist = 4.8 mm 4. Low Thermal Resistance

文件：169.05 Kbytes 页数：6 Pages

IRF

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.5A)

DESCRIPTION This new series of Low Charge Power HEXFETs achieve significantly lower gate charge over conventional HEXFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：225.71 Kbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：1.66555 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：1.66555 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

DESCRIPTION This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced HEXFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device im

文件：1.033819 Mbytes 页数：9 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

文件：2.81499 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：1.30688 Mbytes 页数：7 Pages

IRF