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IRFI9530G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:1.48521 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI9530G

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see

文件:603.78 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI9530G

Power MOSFET(Vdss=-100V, Rds(on)=0.30ohm, Id=-7.7A)

文件:174.46 Kbytes 页数:6 Pages

IRF

IRFI9530G

P-Channel MOSFET

FEATURES ·Drain Current -ID= -7.7A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

文件:298.78 Kbytes 页数:2 Pages

ISC

无锡固电

IRFI9530G_V01

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see

文件:603.78 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI9530GPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:1.48521 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI9530GPBF

HEXFET Power MOSFET

文件:3.52185 Mbytes 页数:7 Pages

IRF

IRFI9530GPBF

P-Channel 100 V (D-S) MOSFET

文件:997.8 Kbytes 页数:7 Pages

VBSEMI

微碧半导体

IRFI9530G

HEXFET Power MOSFET

Infineon

英飞凌

详细参数

  • 型号:

    IRFI9530G

  • 功能描述:

    MOSFET P-Chan 100V 7.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO 220F
161093
明嘉莱只做原装正品现货
询价
IR
03+
原厂原装
3000
全新原装 绝对有货
询价
IR
24+
原厂封装
75
原装现货假一罚十
询价
IR
2015+
TO-220F
12500
全新原装,现货库存长期供应
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IR
24+
TO-220FullPak(Iso)
8866
询价
sil
23+
NA
2186
专做原装正品,假一罚百!
询价
VISHAY
25+23+
TO-220F
19771
绝对原装正品全新进口深圳现货
询价
IR
20+
TO-220F
38900
原装优势主营型号-可开原型号增税票
询价
IR
24+
TO-220F
6430
原装现货/欢迎来电咨询
询价
更多IRFI9530G供应商 更新时间2025-12-12 19:09:00