Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap

文件：169.14 Kbytes 页数：6 Pages

IRF

HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.50 Ohm, ID = -6.1 A

Infineon

英飞凌

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap

文件：169.14 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件：1.6845 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESC

文件：883.19 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESC

文件：883.19 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件：1.6845 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap

文件：1.26811 Mbytes 页数：8 Pages

IRF

Power MOSFET

文件：1.66467 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.66467 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司