IRFIBC20说明书PDF资料行情报价威世科技IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFIBC20	文件：167.28 Kbytes Page：6 Pages	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 文件：167.28 Kbytes 页数：6 Pages	IRF	IRF
IRFIBC20G	文件：167.28 Kbytes Page：6 Pages	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 文件：167.28 Kbytes 页数：6 Pages	IRF	IRF
IRFIBC20G	文件：1.47864 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati 文件：1.47864 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFIBC20G	文件：3.99545 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：3.99545 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFIBC20GPBF	文件：1.47864 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicati 文件：1.47864 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFIBC20GPBF	文件：920.46 Kbytes Page：8 Pages	HEXFET Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dist. = 4.8 文件：920.46 Kbytes 页数：8 Pages	IRF	IRF
IRFIBC20GPBF	文件：3.99545 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：3.99545 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFIBC20G	文件：319.25 Kbytes Page：2 Pages	iscN-Channel MOSFET Transistor 文件：319.25 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFIBC20	文件：300 bytes Page：1 Pages	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)	Infineon 英飞凌	Infineon
IRFIBC20G	文件：300 bytes Page：1 Pages	Power MOSFET	Vishay 威世科技	Vishay

详细参数

型号：
IRFIBC20
制造商：
IRF
制造商全称：
International Rectifier
功能描述：
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市振宏微科技有限公司	IRFIBC20	IR	23+	TO-220F	10000	专做原装正品,假一罚百!	询价
艾睿（深圳）半导体有限公司	IRFIBC20	IR	2447	TO-220F	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
京海半导体(深圳)有限公司	IRFIBC20	VB	21+	TO-220F	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IRFIBC20	IR	22+	TO-220	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	IRFIBC20	I	23+	TO-220F	6000	原装正品，支持实单	询价
深圳市晨豪科技有限公司	IRFIBC20	INFINEON/英飞凌	23+	TO-220F	89630	当天发货全新原装现货	询价
深圳市安富世纪电子有限公司	IRFIBC20	IR	23+	TO-220F	8000	只做原装现货	询价
天津市博通航睿技术有限公司	IRFIBC20	IR	23+	TO-220F	7000		询价
深圳市宏捷佳电子科技有限公司	IRFIBC20	I	25+	TO-TO-220F	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市富芯乐电子科技有限公司	IRFIBC20	IR	24+	TO-220F	4500	只做原装正品现货欢迎来电查询15919825718	询价

更多IRFIBC20供应商更新时间2025-10-4 17:00:00

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