Vishay Siliconix

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：159.49 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)

Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS† Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characteri

文件：149.09 Kbytes 页数：8 Pages

IRF

iscN-Channel MOSFET Transistor

文件：319.83 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed powe

文件：223.44 Kbytes 页数：9 Pages

IRF

Power MOSFET

文件：200.13 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：200.13 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A

Infineon

英飞凌