N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

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Fairchild

仙童半导体

5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET

5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

文件：54.97 Kbytes 页数：7 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.59241 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：158.83 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. • FEATURES • Low RDS(on) • VGS Rated at ±20V • Silicon Gate for Fast Switching Speed • Rugged • Low Drive Requirements

文件：45.07 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. FEATURES • Dynamic dV/dt Rating

文件：107.31 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.55 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CONTROL, AUDIO AMPLIFIERS

文件：184.68 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A

文件：141.79 Kbytes 页数：1 Pages

TEL

N-Channel Power Mosfets

文件：154.1 Kbytes 页数：5 Pages

ARTSCHIP

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

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