COLOUR TELEVISION

文件：6.0518 Mbytes 页数：70 Pages

TOSHIBA

东芝

Power MOSFET

文件：107.31 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

ST

意法半导体

N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A.

GESS

Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220AB

NJS

Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：158.83 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 25 A RDS(ON)

文件：971.39 Kbytes 页数：5 Pages

Bychip

百域芯

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 0.626W(TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

文件：70.07 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.626 Ω(Typ.)

文件：259.43 Kbytes 页数：7 Pages

Fairchild

仙童半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：875.31 Kbytes 页数：10 Pages

Fairchild

仙童半导体