Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：158.83 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N

文件：1.23235 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.45043 Mbytes 页数：2 Pages

SAMYANG

三阳电子

Switchmode Ultra-Fast Power Rectifier

Features ◇ Superfast recovery times-epitaxial construction ◇ Low forward voltage,High current capability ◇ Fast switching for high efficiency ◇ Excellent low reverse leakages ◇ Excellent high temperature stability ◇ Low stored charge majority carrier conduction ◇ High forward surge capabili

文件：1.25706 Mbytes 页数：4 Pages

LUGUANG

鲁光电子