N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power Field Effect Transistor

TMOS POWER FET 4.5 AMPERES 500 VOLTS RDS(on)= 1.5 Ω This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. •Silicon Gate for Fast Switching Speeds •Low RDS(on)to Minimize On–Loss

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ONSEMI

安森美半导体

PowerMOS transistor Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. FEATURES • Repe

文件：58.83 Kbytes 页数：7 Pages

PHI

飞利浦

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

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VishayVishay Siliconix

威世科技

4.5A 500V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c converters, motor control circuits and general purpose switching applications. The IRF830 is supplied in

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FCI

富加宜

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description APEC MOSFET provide the power designer with the best combination of fastswitching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC conv

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A-POWER

富鼎先进电子

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE N channel in a plastic TO220 package. They are intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies. DC-DC converters, motor control circuits and general purpose switching applications Compliance to RoHS.

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COMSET

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

VDSS= 500 Volts RDS(on)= 1.5 Ohms ID= 4.0 Amperes Description Designed to withstand high energy in the avalanche mode and switch efficiently. Also offer a drain-to-source diode with fast recovery time. Designed for high voltage, high speed applications such as power supplies, PWM

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DCCOM

道全

Drives 1 x 70W HID lamp

Overview The IRPLHID2A reference design kit consists of a complete ballast solution for a 70W HID lamp. The design contains an EMI filter, low voltage power supply, active power factor correction and a ballast control circuit using the IRS2573D. This demo board is intended to help with the evalua

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IRF