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IRF8308MPBF

RoHs Compliant Containing No Lead and Bromide

Description TheIRF8308MPbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF8308MPBF

RoHs Compliant Containing No Lead and Bromide

Description TheIRF8308MPbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF8308MTR1PBF

RoHs Compliant Containing No Lead and Bromide

Description TheIRF8308MPbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF8308MTRPBF

RoHs Compliant Containing No Lead and Bromide

Description TheIRF8308MPbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF830A

HEXFET Power MOSFET

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSu

IRF

International Rectifier

IRF830A

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable  

VishayVishay Siliconix

威世科技威世科技半导体

IRF830A

Low Gate Charge Qg Results in Simple Drive Requirement

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830AL

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

IRF830AL

Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)

SMPSMOSFET Benefits ●LowGateChargeQgResultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSup

IRF

International Rectifier

IRF830AL

Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRF830

  • 功能描述:

    MOSFET N-Chan 500V 4.5 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
11+
TO-220
62000
原装正品现货优势18
询价
FSC/仙童
24+
TO-220
7512
绝对原装现货,价格低,欢迎询购!
询价
VISHAY
23+
TO-220
2800
原厂原装正品
询价
IR
18+
MODULE
1290
主打模块,大量现货供应商QQ2355605126
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
06+
TO-220
7000
全新原装 绝对有货
询价
INTERSIL
24+/25+
121
原装正品现货库存价优
询价
IR
23+
TO-220
18689
询价
STM
24+
原厂封装
232765
原装现货假一罚十
询价
IR
23+
TO-220
9960
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
更多IRF830供应商 更新时间2025-5-21 13:38:00