首页 >IRF8308MTR1PBF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF8308MTR1PBF | RoHs Compliant Containing No Lead and Bromide Description The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：271.83 Kbytes 页数：10 Pages | IRF | IRF | |
TO-220 | IR | |||
TO-220 | VISHAY/威世 上传：深圳庞田科技有限公司 | VISHAY/威世 | ||
TO-220 | IR | |||
TO-220 | VISHAY |
详细参数
- 型号：
IRF8308MTR1PBF
- 功能描述：
MOSFET 30V N-Channel HEXFET Power MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
DIRECTFET |
6200 |
100%原装正品现货 |
询价 | ||
Infineon Technologies |
21+ |
DIRECTFET? MX |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
INFINEON |
25+ |
DIRECTFET? |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
1923+ |
DIRECTFET |
5000 |
正品原装品质假一赔十 |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
23+ |
DIRECTFET |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
25+ |
DIRECTFET |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MX |
9000 |
原厂渠道,现货配单 |
询价 | ||
is |
25+ |
500000 |
行业低价,代理渠道 |
询价 | |||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 |
更多IRF8308MTR1PBF供应商
更新时间2026-2-1 16:01:00
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