isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID= 3.0A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) • Fast Switching Speed • Simple Drive Requirements APPLICATIONS • Desinged for high efficiency switch mode power supply.

文件：64.099 Kbytes 页数：2 Pages

ISC

无锡固电

Trans MOSFET 500V 3A 3-Pin(3+Tab) ISOWATT220

NJS

POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. FEATURES Higher Current Rating Lower rDS(ON), Lower Capacitances Lower Total Gate Charge Tighter VSD

文件：225.25 Kbytes 页数：4 Pages

SUNTAC

4.5A 500V N CHANNEL POWER MOSFET

文件：405.68 Kbytes 页数：5 Pages

FCI

富加宜

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220CFM isolation package is widely preferred for commercial industrial through hole applications. ▼Ease of Paralleling ▼Fast Switching Char

文件：100.98 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子