IRF830FI

isc N-Channel MOSFET Transistor

DESCRIPTION •DrainCurrent–ID=3.0A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) •FastSwitchingSpeed •SimpleDriveRequirements APPLICATIONS •Desingedforhighefficiencyswitchmodepowersupply.

IRF830FP

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

IRF830FP

4.5A500VNCHANNELPOWERMOSFET

IRF830I-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220CFMisolationpackageiswidelypreferredforcommercialindustrialthroughholeapplications. ▼EaseofParalleling ▼FastSwitchingChar

IRF830L

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

IRF830LPBF

PowerMOSFET

IRF830PBF

HEXFETPowerMOSFET

IRF830PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

IRF830PBF

5.0A,500VHeatsinkN-ChannelTypePowerMOSFET

IRF830PBF

N-Channel600V(D-S)PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent APPLICATIONS •Switchmodepowersupply(SMPS) •Uninterruptiblepowersupply •Highspee