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IRF830ASTRL

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

IRF830ASTRLPBF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

IRF830ASTRLPBF

N-Channel 6 50V (D-S) Power MOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF830ASTRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF830B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830B

Reducedcapacitiveswitchinglosses

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半导体

IRF830B

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830BPBF

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830F

4.4A,500V,1.5廓N-CHANNELPOWERMOSFET

DESCRIPTION ➤IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecove

FS

First Silicon Co., Ltd

详细参数

  • 型号:

    IRF830ASTRL

  • 功能描述:

    MOSFET N-Chan 500V 5.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VBsemi(台湾微碧)
2447
TO-263
105000
800个/圆盘一级代理专营品牌!原装正品,优势现货,长
询价
VISHAY
1503+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
VBSEMI/台湾微碧
23+
TO263
50000
全新原装正品现货,支持订货
询价
VB
21+
D2PAK
10000
原装现货假一罚十
询价
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
询价
VBSEMI
23+
TO-263
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Vishay Siliconix
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原装正品,支持实单
询价
Vishay Siliconix
2022+
TO-263-3,D2Pak(2 引线 + 接片
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
I
25+
D2PAK
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VBSEMI/台湾微碧
24+
TO263
60000
询价
更多IRF830ASTRL供应商 更新时间2025-7-16 15:01:00