Power MOSFET

文件：242.75 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：888.87 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：1.61271 Mbytes 页数：9 Pages

KERSEMI

Reduced capacitive switching losses

FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Simple gate drive circuitry

文件：296.71 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司