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IRF830PBF

N-Channel 600V (D-S) Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent APPLICATIONS •Switchmodepowersupply(SMPS) •Uninterruptiblepowersupply •Highspee

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF830PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半导体

IRF830PBF

5.0A,500V Heatsink N-Channel Type Power MOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

IRF830PBF

HEXFET Power MOSFET

IRF

International Rectifier

IRF830S

PowerMOSFET(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount •AvailableinTape&Reel •DynamicdV/dtRating •RepetitiveAvalanche

IRF

International Rectifier

IRF830S

N-ChannelMOSFET

■Features ●VDS(V)=500V ●ID=4.5A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

IRF830S

AvailableinTapeandReel

DESCRIPTION TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2PAK(TO-263)issuitableforhighcurrentapplicationsbecause

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830S

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830S

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

IRF830SPBF

HEXFET짰PowerMOSFET

IRF

International Rectifier

详细参数

  • 型号:

    IRF830PBF

  • 功能描述:

    MOSFET N-Chan 500V 4.5 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY
24+
TO-220
61030
保证进口原装现货假一赔十
询价
VISHAY
2020+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
2020+
TO-220
22000
全新原装正品 现货库存 价格优势
询价
Vishay Siliconix
24+
TO-220AB
30000
晶体管-分立半导体产品-原装正品
询价
VISHAY
24+
TO-220
15000
全新原装的现货
询价
23+
原厂封装
21058
专注原装正品现货特价中量大可定
询价
VISHAY
16+
TO-220
36000
原装正品,优势库存81
询价
IR
23+
TO220AB
56000
询价
INFINEON/英飞凌
24+
TO-220
18463
原装进口假一罚十
询价
VISHAY
24+
TO-220
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多IRF830PBF供应商 更新时间2025-7-1 16:40:00